Title :
High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation
Author :
Maher, H. ; DiSanto, D.W. ; Dvorak, M.W. ; Soerensen, G. ; Bologaesi, C.R. ; Bardwell, J.A. ; Tang, H. ; Webb, J.B.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
fDate :
11/9/2000 12:00:00 AM
Abstract :
The authors demonstrate high-performance heterostructure field-effect transistors (HFETs) with mesa isolation achieved by a recently developed UV-assisted, batch processing compatible, wet etching process. HFETs with a 0.2 μm gate feature peak cutoff frequencies of fT=43 GHz and fmax=98 GHz for a piezoelectric HFET grown on a sapphire substrate by molecular beam epitaxy. The transistors feature low gate diode leakage currents and display no sensitivity to visible light
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; isolation technology; junction gate field effect transistors; leakage currents; millimetre wave field effect transistors; molecular beam epitaxial growth; piezoelectric devices; piezoelectric semiconductors; semiconductor growth; ultraviolet radiation effects; wide band gap semiconductors; 0.2 mum; 43 GHz; 98 GHz; AlGaN-GaN; UV-assisted batch processing compatible wet etching process; high-performance heterostructure field-effect transistors; high-speed AlGaN/GaN HFETs; low gate diode leakage currents; molecular beam epitaxy; peak cutoff frequencies; piezoelectric HFET; sapphire substrate; wet etching mesa isolation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001351
