Title :
High-voltage GaN pin vertical rectifiers with 2 μm thick i-layer
Author :
Zhu, T.G. ; Lambert, D.J.H. ; Shelton, B.S. ; Wong, M.M. ; Chowdhury, U. ; Kwon, Ho Ki ; Dupuis, R.D.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
11/9/2000 12:00:00 AM
Abstract :
Gallium nitride pin rectifiers have been fabricated and characterised. The device structures were grown by metalorganic chemical vapour deposition on c-plane sapphire substrates. The pin diode epitaxial structure consisted of an n+-GaN layer, followed by a 2 μm i-GaN layer and a p-type GaN layer on top. The mesa-structure pin diodes exhibited a blocking voltage as large as Vr≃-410 V at a reverse current density of Ir≃10 A/cm2 and a forward voltage drop of only 8 V at a forward current density of ~100 A/cm2. These values indicate that GaN-based pin rectifiers can be useful in high-voltage circuits
Keywords :
III-V semiconductors; MOCVD; current density; gallium compounds; p-i-n diodes; semiconductor device measurement; semiconductor growth; solid-state rectifiers; wide band gap semiconductors; -410 V; 2 mum; 8 V; Al2O3; GaN; GaN-based pin rectifiers; blocking voltage; c-plane sapphire substrates; device structure; forward current density; forward voltage drop; gallium nitride pin rectifiers; high-voltage GaN pin vertical rectifiers; high-voltage circuits; i-GaN layer; i-layer; mesa-structure pin diodes; metalorganic chemical vapour deposition; n+-GaN layer; p-type GaN layer; pin diode epitaxial structure; reverse current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001329
