Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation

Author

Neogi, A. ; Yoshida, H. ; Mozume, T. ; Georgiev, N. ; Akiyama, T. ; Wada, O.

Author_Institution

Dept. of Phys., Duke Univ., Durham, NC, USA

Volume

36

Issue

23

fYear

2000

fDate

11/9/2000 12:00:00 AM

Firstpage

1972

Lastpage

1974

Abstract

InP based InGaAs/AlAs/AlAsSb coupled double quantum well (CDQW) structures have been developed for intersubband transition (ISBT) in the near-infrared region for operation at communication wavelength. ISBT in CDQWs is influenced by the well and barrier width, and by the carrier population in the ground subband state governed by the doping level or the carrier temperature. ISBT at 1.3 and 1.55 μm can be achieved in 1.0 nm AlAs barrier coupled InGaAs/AlAsSb DQW with well widths 2.1 nm doped to 10¹⁸ cm^-3, and 2.7 nm doped to 10¹⁸ cm^-3, respectively

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; infrared spectra; interface states; semiconductor quantum wells; 1 nm; 1.3 mum; 1.55 mum; 2.1 nm; 2.7 nm; AlAs barrier coupled InGaAs/AlAsSb DQW; CDQWs; InGaAs-AlAs-AlAsSb; InGaAs/AlAsSb/InP coupled double quantum well structures; InP; InP based InGaAs/AlAs/AlAsSb coupled double quantum well; barrier width; carrier population; carrier temperature; communication wavelength operation; doping level; ground subband state; intersubband transition; near-infrared region; well width;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001354

Filename

888690