Temperature dependence of millimetre-wave MMICs

Author

Brabetz, T. ; Buchanan, N.B. ; Fusco, V.F.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK

Volume

36

Issue

23

fYear

2000

fDate

11/9/2000 12:00:00 AM

Firstpage

1976

Lastpage

1977

Abstract

The authors report the on-chip measured and modelled temperature dependence of the performance of GaAs MMIC components for 60-70 GHz mobile broadband communication systems, namely two amplifiers and a down converter. A new model has been developed, which uses the cut-off frequency of the active device for predicting the drop in gain with temperature, thereby circumventing the need for complex temperature dependent device models. Amplifier gain was measured and predicted to decrease from 4 dB at 273 K to 2.9 dB at 413 K for a single stage amplifier, from 8.5 dB at 273 K to 6.7 dB at 413 K for a dual stage amplifier, while mixer conversion loss was measured and predicted to increase by ~3 dB from 1 to 4 dB over the same temperature range

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; field effect MIMIC; gallium arsenide; integrated circuit measurement; integrated circuit modelling; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave mixers; thermal analysis; 1 to 4 dB; 2.9 to 8.5 dB; 273 to 413 K; 60 to 70 GHz; EHF; GaAs; GaAs MIMIC components; MM-wave ICs; PHEMT technology; active device cutoff frequency; amplifiers; circuit temperature behaviour prediction; down converter; dual stage amplifier; gain reduction; millimetre-wave MMICs; mixer conversion loss; mobile broadband communication systems; model; pseudomorphic HEMT; single stage amplifier; temperature dependence;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001353

Filename

888692