Title :
Submilliampere threshold current in 1.3 μm InAsP n-type modulation doped MQW lasers grown by gas source molecular beam epitaxy
Author :
Shimizu, H. ; Kumada, K. ; Yamanaka, N. ; Iwai, N. ; Mukaihara, T. ; Kasukawa, A.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
8/6/1998 12:00:00 AM
Abstract :
A very low CW threshold current of 0.9 mA has been obtained in a 1.3 μm InAsP n-type modulation doped MQW laser at room temperature. This is the lowest threshold current ever reported for long-wavelength lasers using n-type modulation doping, and the lowest result grown by gas source molecular beam epitaxy in the long wavelength region
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor laser arrays; 0.9 mA; 1.3 micrometre; CW threshold current; InAsP; gas source molecular beam epitaxy; long-wavelength lasers; n-type modulation doped MQW lasers; submilliampere threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981076
