Vertical RF Transition With Mechanical Fit for 3-D Heterogeneous Integration

Author

Chen, Lihan ; Wood, Joseph ; Raman, Sanjay ; Barker, N. Scott

Author_Institution

Charles L. Brown Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume

60

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

647

Lastpage

654

Abstract

This paper presents the design, simulation, and measurement of a vertical RF interconnect with mechanical fit for 3-D heterogeneous integration. The mechanical fit is a flip-chip strategy employing interlocking SU-8, an ultra-thick photoresist, structures to prevent misalignment during assembly and increase the reliability of the interconnects. To determine the electromagnetic characteristics, such as insertion loss and the coupling between face-to-face chips, different test structures were fabricated and measured. Experimental results show excellent RF performance up to 110 GHz with low insertion loss (better than 0.1 dB per transition at 40 GHz).

Keywords

flip-chip devices; integrated circuit interconnections; integrated circuit packaging; millimetre wave integrated circuits; photoresists; three-dimensional integrated circuits; waveguide transitions; 3D heterogeneous integration; SU-8; flip-chip strategy; mechanical fit; ultrathick photoresist; vertical RF interconnect; vertical RF transition; Assembly; Bonding; Coplanar waveguides; Gold; Integrated circuit modeling; Radio frequency; Transmission line measurements; $W$ -band; Coplanar waveguide (CPW); SU-8; mechanical fit; vertical transition;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2011.2176502

Filename

6123175