DocumentCode :
1415708
Title :
2.7 μm LEDs for water vapour detection grown by MBE on InP
Author :
Krier, A. ; Chubb, D. ; Hopkinson, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Volume :
34
Issue :
16
fYear :
1998
fDate :
8/6/1998 12:00:00 AM
Firstpage :
1606
Lastpage :
1607
Abstract :
In0.87Ga0.13As/InAs0.70P0.30 double heterostructure light emitting diodes were grown on InP substrates using strain relaxed buffers by molecular beam epitaxy. The InAsP buffer incorporates a compositional step-back to reduce the threading dislocation density in the active region. Efficient electroluminescence at 2.7 μm was obtained at room temperature. A strong absorption is observed in the emission spectrum due to the presence of water vapour
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor epitaxial layers; spectrochemical analysis; water; 2.7 micron; H2O; In0.87Ga0.13As-InAs0.70P 0.30; In0.87Ga0.13As/InAs0.70P 0.30 DH LED; InP substrate; MBE growth; compositional step-back; electroluminescence; strain relaxed buffer layer; threading dislocation density; water vapour detection;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981137
Filename :
707169
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1415708
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