• DocumentCode
    1415721
  • Title

    Infrared difference frequency generation with quasi-phase-matched GaAs

  • Author

    Lallier, E. ; Becouarn, L. ; Brevignon, M. ; Lehoux, J.

  • Author_Institution
    Central de Recherches, Thomson-CSF, Orsay, France
  • Volume
    34
  • Issue
    16
  • fYear
    1998
  • fDate
    8/6/1998 12:00:00 AM
  • Firstpage
    1609
  • Lastpage
    1611
  • Abstract
    The authors report infrared difference-frequency generation in a high transmission diffusion-bonded GaAs stack. Using an LiNbO3 optical parametric oscillator as the pump source, a conversion efficiency of 3.4×1.0-4, output energy of 2 μJ and 180 W peak power were obtained at 11.35 μm
  • Keywords
    III-V semiconductors; gallium arsenide; optical frequency conversion; 11.35 micron; 180 W; 2 muJ; GaAs; LiNbO3 optical parametric oscillator pump; conversion efficiency; diffusion-bonded GaAs stack; infrared difference frequency generation; quasi-phase-matching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981143
  • Filename
    707172