DocumentCode
1415721
Title
Infrared difference frequency generation with quasi-phase-matched GaAs
Author
Lallier, E. ; Becouarn, L. ; Brevignon, M. ; Lehoux, J.
Author_Institution
Central de Recherches, Thomson-CSF, Orsay, France
Volume
34
Issue
16
fYear
1998
fDate
8/6/1998 12:00:00 AM
Firstpage
1609
Lastpage
1611
Abstract
The authors report infrared difference-frequency generation in a high transmission diffusion-bonded GaAs stack. Using an LiNbO3 optical parametric oscillator as the pump source, a conversion efficiency of 3.4×1.0-4, output energy of 2 μJ and 180 W peak power were obtained at 11.35 μm
Keywords
III-V semiconductors; gallium arsenide; optical frequency conversion; 11.35 micron; 180 W; 2 muJ; GaAs; LiNbO3 optical parametric oscillator pump; conversion efficiency; diffusion-bonded GaAs stack; infrared difference frequency generation; quasi-phase-matching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981143
Filename
707172
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