On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors

Author

Borgarino, M. ; Tartarin, J.G. ; Kuchenbecker, J. ; Parra, T. ; Lafontaine, H. ; Kovacic, T. ; Plana, R. ; Graffeuil, J.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

Volume

10

Issue

11

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

466

Lastpage

468

Abstract

This work for the first time experimentally investigates the hot carrier effects on the RF characteristics (up to 30 GHz) of Si/SiGe heterojunction bipolar transistors (HBT´s). Reverse base-emitter voltage stresses were applied at room temperature on BiCMOS compatible, sub-micron transistors. The main observed degradation is a decrease of S ₂₁. It was found that this degradation is minimized (maximized) when biasing at constant collector (base) current. These results may be valuable indications also for degradations induced by ionizing radiations

Keywords

BiCMOS integrated circuits; Ge-Si alloys; S-parameters; UHF bipolar transistors; elemental semiconductors; heterojunction bipolar transistors; hot carriers; microwave bipolar transistors; semiconductor device reliability; semiconductor materials; silicon; 30 GHz; BiCMOS compatible submicron transistors; RF characteristics; S₂₁ parameter; Si-SiGe; Si/SiGe HBT; heterojunction bipolar transistors; hot carriers; ionizing radiation induced degradation; reverse base-emitter voltage stresses; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carrier effects; Hot carriers; Radio frequency; Silicon germanium; Stress; Temperature; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.888834

Filename

888834