DocumentCode
1415799
Title
A balanced self-oscillating mixer
Author
Bourhill, N. ; Iezekiel, S. ; Steenson, D.P.
Author_Institution
Inst. of Microwaves & Photonics, Leeds Univ., UK
Volume
10
Issue
11
fYear
2000
Firstpage
481
Lastpage
483
Abstract
A balanced self-oscillating mixer is proposed. It consists of a pair of AlGaAs/GaAs 10×45 μm pHEMTs, oscillating at 7.53 GHz and uses the extended resonance effect. The circuit exhibits a conversion gain of 3.6 dB and reduces the second-order intermodulation products by 18.3 dB. The balanced nature of the oscillators also provides good LO to RF isolation of 40.5 dB when used as an upconverter. This approach relaxes the filtering requirements for generating single-sideband AM.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC mixers; aluminium compounds; gallium arsenide; intermodulation; 3.6 dB; 45 micron; 7.53 GHz; AlGaAs-GaAs; III-V semiconductors; LO to RF isolation; balanced self-oscillating mixer; conversion gain; extended resonance effect; filtering requirements; pHEMTs; second-order intermodulation products; single-sideband AM; upconverter; Circuit topology; Filtering; Gallium arsenide; Injection-locked oscillators; MMICs; Microstrip; Mixers; Power combiners; Radio frequency; Resonance;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.888839
Filename
888839
Link To Document