DocumentCode :
1415799
Title :
A balanced self-oscillating mixer
Author :
Bourhill, N. ; Iezekiel, S. ; Steenson, D.P.
Author_Institution :
Inst. of Microwaves & Photonics, Leeds Univ., UK
Volume :
10
Issue :
11
fYear :
2000
Firstpage :
481
Lastpage :
483
Abstract :
A balanced self-oscillating mixer is proposed. It consists of a pair of AlGaAs/GaAs 10×45 μm pHEMTs, oscillating at 7.53 GHz and uses the extended resonance effect. The circuit exhibits a conversion gain of 3.6 dB and reduces the second-order intermodulation products by 18.3 dB. The balanced nature of the oscillators also provides good LO to RF isolation of 40.5 dB when used as an upconverter. This approach relaxes the filtering requirements for generating single-sideband AM.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; aluminium compounds; gallium arsenide; intermodulation; 3.6 dB; 45 micron; 7.53 GHz; AlGaAs-GaAs; III-V semiconductors; LO to RF isolation; balanced self-oscillating mixer; conversion gain; extended resonance effect; filtering requirements; pHEMTs; second-order intermodulation products; single-sideband AM; upconverter; Circuit topology; Filtering; Gallium arsenide; Injection-locked oscillators; MMICs; Microstrip; Mixers; Power combiners; Radio frequency; Resonance;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.888839
Filename :
888839
Link To Document :
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