Title :
EEPROM transistor fabricated with stacked SiOx LPCVD films
Author :
Calleja, W. ; Aceves, M. ; Falcony, C.
Author_Institution :
Dept. de Electron., INAOE, Puebla, Mexico
fDate :
6/25/1998 12:00:00 AM
Abstract :
The key fabrication steps and the write/erase characteristics of a new memory metal-insulator-silicon transistor are presented. The memory cell is composed of a single silicon gate and a stacked SiOx LPCVD film as an active memory film. With this new arrangement, the memory device shows excellent endurance
Keywords :
CVD coatings; EPROM; MOSFET; insulating thin films; silicon compounds; EEPROM; MIS transistor; Si-SiO; fabrication; memory cell; silicon gate; stacked SiOx LPCVD film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980939
