• DocumentCode
    1415867
  • Title

    HfSiO Bulk Trap Density Controls the Initial V_{\\rm th} in nMOSFETs

  • Author

    Sahhaf, Sahar ; Degraeve, Robin ; Srividya, V. ; De Brabanter, Kris ; Schram, Tom ; Gilbert, M. ; Vandervorst, Wilfried ; Groeseneken, Guido

  • Author_Institution
    Interuniv. Microelectron. Center, Leuven, Belgium
  • Volume
    12
  • Issue
    2
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    323
  • Lastpage
    334
  • Abstract
    The underlying physical mechanism of the Vth adjustment of nMOSFETs with HfSiO/TiN gate stack obtained by As and Ar implantation is investigated. It is experimentally proved that the trapped charge in the HfSiO bulk defects controls the initial Vth value in nMOSFETs. The reduction of the charged trap density in HfSiO by implant explains the tuned Vth values.
  • Keywords
    MOSFET; hafnium compounds; HfSiO; bulk defects; bulk trap density; charged trap density; nMOSFET; Argon; Dielectrics; Electron traps; High K dielectric materials; Implants; Logic gates; Metals; $V_{rm fb}$ ; HfSiO bulk defect density; initial $V_{rm th}$; reliability;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2012.2182997
  • Filename
    6123203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1415867