980 nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition

Author

Yang, G.W. ; Xu, Z.T. ; Ma, X.Y. ; Xu, J.Y. ; Zhang, J.M. ; Chen, L.H.

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

34

Issue

13

fYear

1998

fDate

6/25/1998 12:00:00 AM

Firstpage

1312

Lastpage

1313

Abstract

The authors report on the fabrication of 980 nm InGaAs strained quantum well lasers with hybrid materials of InGaAsP as waveguide and AlGaAs as cladding grown by metal organic chemical vapour deposition. The InGaAs-InGaAsP-AlGaAs diode lasers (100×800 μm) with broadened waveguide structure exhibit a threshold current of 180 mA, a slope efficiency of 1.0 W/A, and a high characteristic temperature coefficient (T₀) of 230 K

Keywords

III-V semiconductors; claddings; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 100 mum; 180 mA; 230 K; 800 mum; 980 nm; AlGaAs; AlGaAs cladding; InGaAs strained quantum well laser fabrication; InGaAs-InGaAsP; InGaAs-InGaAsP-AlGaAs; InGaAs-InGaAsP-AlGaAs diode lasers; InGaAs/InGaAsP quantum well lasers; InGaAsP waveguide; broadened waveguide structure; high characteristic temperature coefficient; hybrid materials; metal organic chemical vapour deposition; slope efficiency; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980944

Filename

707212