DocumentCode :
1415968
Title :
InP-based 1.5 μm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors
Author :
Gebretsadik, H. ; Bhattacharya, P.K. ; Kamath, K.K. ; Qasaimeh, O.R. ; Klotzkin, D.J. ; Caneau, C. ; Bhat, R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
34
Issue :
13
fYear :
1998
fDate :
6/25/1998 12:00:00 AM
Firstpage :
1316
Lastpage :
1318
Abstract :
Room temperature pulsed operation of a novel 1.5 μm vertical cavity surface emitting laser is reported. A GaAs-Al0.95Ga 0.05As heterostructure is grown directly on the patterned InGaAsP-InP quantum well active region. Selective lateral oxidation of a lattice matched In0.52Al0.48As layer is used for current confinement and, to create the top AlxOy-GaAs distributed Bragg reflector. The minimum threshold current is 12 mA
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser transitions; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; 1.5 mum; 12 mA; DBR semiconductor lasers; GaAs; GaAs-Al0.95Ga0.05As; GaAs-Al0.95Ga0.05As heterostructure; In0.52Al0.48As; InP; InP-based 1.5 μm vertical cavity surface emitting laser; current confinement; epitaxially grown defect-free GaAs-based distributed Bragg reflectors; lattice matched In0.52Al0.48As layer; minimum threshold current; patterned InGaAsP-InP quantum well active region; room temperature pulsed operation; selective lateral oxidation; top AlxOy-GaAs distributed Bragg reflector;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980919
Filename :
707216
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1415968
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