InP-based 1.5 μm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors

Author

Gebretsadik, H. ; Bhattacharya, P.K. ; Kamath, K.K. ; Qasaimeh, O.R. ; Klotzkin, D.J. ; Caneau, C. ; Bhat, R.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

34

Issue

13

fYear

1998

fDate

6/25/1998 12:00:00 AM

Firstpage

1316

Lastpage

1318

Abstract

Room temperature pulsed operation of a novel 1.5 μm vertical cavity surface emitting laser is reported. A GaAs-Al_0.95Ga _0.05As heterostructure is grown directly on the patterned InGaAsP-InP quantum well active region. Selective lateral oxidation of a lattice matched In_0.52Al_0.48As layer is used for current confinement and, to create the top Al_xO_y-GaAs distributed Bragg reflector. The minimum threshold current is 12 mA

Keywords

III-V semiconductors; distributed Bragg reflector lasers; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser transitions; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; 1.5 mum; 12 mA; DBR semiconductor lasers; GaAs; GaAs-Al_0.95Ga_0.05As; GaAs-Al_0.95Ga_0.05As heterostructure; In_0.52Al_0.48As; InP; InP-based 1.5 μm vertical cavity surface emitting laser; current confinement; epitaxially grown defect-free GaAs-based distributed Bragg reflectors; lattice matched In_0.52Al_0.48As layer; minimum threshold current; patterned InGaAsP-InP quantum well active region; room temperature pulsed operation; selective lateral oxidation; top Al_xO_y-GaAs distributed Bragg reflector;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980919

Filename

707216