DocumentCode
1415999
Title
Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz
Author
Eisele, H.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
34
Issue
13
fYear
1998
fDate
6/25/1998 12:00:00 AM
Firstpage
1324
Lastpage
1326
Abstract
GaAs TUNNETT diodes on diamond heat sinks yielded state-of-the-art RF power levels of 9 and >4 mW with corresponding DC-to-RF conversion efficiencies of >1.0 and >0.6% in a second-harmonic mode at 209 and 235 GHz, respectively. The phase noise was well below -94 dBc/Hz at a carrier frequency of 500 kHz. Simulations revealed a varactor-like mode of operation
Keywords
III-V semiconductors; diamond; gallium arsenide; heat sinks; millimetre wave diodes; phase noise; power semiconductor diodes; semiconductor device noise; transit time devices; tunnel diodes; 0.6 to 1 percent; 209 to 235 GHz; 4 to 9 mW; C; DC-to-RF conversion efficienc; GaAs; GaAs TUNNETT diodes; diamond heat sinks; phase noise; second-harmonic power extraction; varactor-like operation mode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980963
Filename
707244
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