Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET´s

Author

Venturi, Franco ; Sangiorgi, Enrico ; Brunetti, Rosella ; Quade, Wolfgang ; Jacoboni, Carlo ; Riccò, Bruno

Author_Institution

Dept. of Electron., Parma Univ., Bologna, Italy

Volume

10

Issue

10

fYear

1991

fDate

10/1/1991 12:00:00 AM

Firstpage

1276

Lastpage

1286

Abstract

Monte Carlo simulations of high-energy electrons and holes in Si n-MOSFETs are presented. Key features of this work include the use of a suitable silicon model for carrier transport at high electric fields, an original impact ionization model, and sophisticated numerical techniques to speed up the calculation. The case of submicrometer Si n-MOSFETs is considered as a relevant application

Keywords

Monte Carlo methods; elemental semiconductors; impact ionisation; insulated gate field effect transistors; semiconductor device models; silicon; Monte Carlo simulations; Si; carrier transport; high electric fields; high energy electrons; impact ionization model; n-MOSFETs; n-channel MOSFET; numerical techniques; submicron devices; Charge carrier processes; Computational modeling; Discrete event simulation; Impact ionization; Jacobian matrices; Monte Carlo methods; Numerical models; Physics; Poisson equations; Silicon;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.88923

Filename

88923