DocumentCode :
1416565
Title :
Nitrided 
as Charge-Trapping Layer for Nonvolatile Memory Applications
Author :
Huang, X.D. ; Sin, Johnny K O ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Volume :
12
Issue :
2
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
306
Lastpage :
310
Abstract :
Charge-trapping characteristics of La2O3 with and without nitrogen incorporation were investigated based on Al/Al2O3/La2O3/SiO2/Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La2O3 as charge-trapping layer, the one with nitrided La2O3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La2O3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; capacitors; high-k dielectric thin films; lanthanum compounds; random-access storage; La2O3; MONOS capacitors; X-ray diffraction; X-ray photoelectron spectroscopy; crystallized structure; high-k films; metal-oxide-nitride-oxide-silicon capacitor; nitrided charge-trapping layer; nitrogen incorporation; nitrogen passivation; nonvolatile memory applications; time 1 ms; voltage -10 V; voltage -14 V; voltage 10 V; voltage 14 V; voltage 4.9 V; Capacitors; Films; High K dielectric materials; MONOS devices; Nitrogen; Silicon; Charge-trapping layer (CTL); high-$k$ $hbox{La}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2011.2182197
Filename :
6125241
Link To Document :
