DocumentCode :
1416627
Title :
Optical-wavelength switching using distributed-feedback laser diodes
Author :
Kawaguchi, Hitoshi ; Magari, K. ; Yasaka, Hiroshi ; Fukuda, Motohisa ; Oe, Katsutoshi ; Takanashi, Yasuyuki
Author_Institution :
Optoelectron. Lab., NTT, Kanagawa
Volume :
35
Issue :
12
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
2456
Abstract :
An optical-wavelength converter with tunability greater than 5 Å has been demonstrated using a multielectrode distributed-feedback laser diode (DFB LD) with a saturable absorber. The buried heterostructure GaInAsP/InP LD with first-order grating was fabricated using a MOVPE/LPE (metalorganic vapor-phase epitaxy/liquid-phase epitaxy) hybrid growth method. The p-type electrode was divided into three 100-μm sections, which can be excited independently through the electrodes. The device emits coherent light only when light input is injected into the saturable absorber, and output wavelength is continuously tuned by the driving currents. This device has high optical gain (input power ~330 μW and output power ~1 mW) and can operate at up to 500 MHz. A narrowband optical filter was constructed using the DFB LD amplifier. The DFB LD amplifier selectively amplifies one optical frequency, which can be changed by changing the LD bias current. Extinction ratios greater than 15 dB were obtained for the two optical inputs with a 9.8-GHz frequency difference. The use of the device for optical wavelength-division switching was investigated
Keywords :
III-V semiconductors; distributed feedback lasers; frequency division multiplexing; gallium arsenide; indium compounds; laser tuning; liquid phase epitaxial growth; optical communication equipment; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 100 micron; 15 dB; 330 to 1000 muW; 500 MHz; DFB LD; DFB LD amplifier; FDM; GaInAsP-InP laser; LPE; MOVPE; WDM; bias current; buried heterostructure; coherent light; continuously tuned; distributed-feedback laser diodes; extinction ratio; first-order grating; input power; light input; multielectrode distributed-feedback laser diode; narrowband optical filter; optical communication equipment; optical gain; optical wavelength-division switching; optical-wavelength converter; output power; output wavelength; saturable absorber; semiconductors; tunability; Diode lasers; Electrodes; Epitaxial growth; Frequency; Indium phosphide; Optical amplifiers; Optical devices; Optical filters; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.8896
Filename :
8896
Link To Document :
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