DocumentCode :
1416864
Title :
Transfer matrix analysis of the amplified spontaneous emission of DFB semiconductor laser amplifiers
Author :
Makino, Toshihiko ; Glinski, Jan
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
Volume :
24
Issue :
8
fYear :
1988
Firstpage :
1507
Lastpage :
1518
Abstract :
Analytical expressions are derived for the amplified spontaneous emission of a DFB (distributed-feedback) semiconductor laser amplifier with reflective cavity ends. The analysis is extended to a multisection DFB structure including a phase-shifted DFB semiconductor laser amplifier. It is shown that the spontaneous emission power per unit frequency bandwidth emitted from one facet is proportional to the transmission gain and to a quantity which at threshold becomes the inverse of the differential quantum efficiency of the other facet. The analysis is applied to two practical cases: (1) calculation of emission spectra of a DFB semiconductor laser biased below the threshold, and (2) assessment of the signal-to-noise ratio performance of DFB semiconductor laser amplifiers.<>
Keywords :
distributed feedback lasers; laser theory; semiconductor junction lasers; superradiance; DFB semiconductor laser amplifiers; differential quantum efficiency; frequency bandwidth; reflective cavity ends; signal-to-noise ratio; spontaneous emission power; transmission gain; Laser feedback; Laser modes; Optical amplifiers; Optical coupling; Optical reflection; Semiconductor lasers; Semiconductor optical amplifiers; Silicon compounds; Spontaneous emission; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.7077
Filename :
7077
Link To Document :
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