Transfer matrix analysis of the amplified spontaneous emission of DFB semiconductor laser amplifiers

Author

Makino, Toshihiko ; Glinski, Jan

Author_Institution

Bell-Northern Res., Ottawa, Ont., Canada

Volume

24

Issue

8

fYear

1988

Firstpage

1507

Lastpage

1518

Abstract

Analytical expressions are derived for the amplified spontaneous emission of a DFB (distributed-feedback) semiconductor laser amplifier with reflective cavity ends. The analysis is extended to a multisection DFB structure including a phase-shifted DFB semiconductor laser amplifier. It is shown that the spontaneous emission power per unit frequency bandwidth emitted from one facet is proportional to the transmission gain and to a quantity which at threshold becomes the inverse of the differential quantum efficiency of the other facet. The analysis is applied to two practical cases: (1) calculation of emission spectra of a DFB semiconductor laser biased below the threshold, and (2) assessment of the signal-to-noise ratio performance of DFB semiconductor laser amplifiers.<>

Keywords

distributed feedback lasers; laser theory; semiconductor junction lasers; superradiance; DFB semiconductor laser amplifiers; differential quantum efficiency; frequency bandwidth; reflective cavity ends; signal-to-noise ratio; spontaneous emission power; transmission gain; Laser feedback; Laser modes; Optical amplifiers; Optical coupling; Optical reflection; Semiconductor lasers; Semiconductor optical amplifiers; Silicon compounds; Spontaneous emission; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.7077

Filename

7077