Title :
Thermal behavior and stability of room-temperature continuous Al xGa1-xAs-GaAs quantum well heterostructure lasers grown on Si
Author :
Hall, D.C. ; Deppe, Dennis G. ; Matyi, Richard J. ; Shichijo, H. ; Epler, J.E.
Author_Institution :
Electr. Eng. Res. Lab., Illinois Univ., Urbana, IL
fDate :
12/1/1988 12:00:00 AM
Abstract :
Thermal characteristics of p-n AlxGa1-xAs-GaAs quantum-well heterostructure (QWH) diode lasers grown on Si substrates have been investigated. Continuous operation at 300 K for over 10 h has been demonstrated for lasers mounted with the junction side away from the heat sink (junction-up) and the heat dissipated through the Si substrate. Junction-up diodes grown on Si substrates had measured thermal impedances 38% lower than those grown on GaAs substrates, with further reductions possible. Measured values were consistent with calculated values for these structures. Low sensitivity of the lasing current to temperature has also been observed, with T0 values as high 338°C
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; semiconductor junction lasers; silicon; substrates; 10 h; 300 K; 338 C; AlxGa1-xAs-GaAs; CW operation; GaAs substrates; QWH; Si substrates; diode lasers; heat sink; junction-up; quantum well heterostructure lasers; room temperature operation; semiconductors; stability; thermal behaviour; thermal characteristics; thermal impedances; thermal resistance; Charge carrier processes; Conductivity; Electrons; Epitaxial layers; Geometry; Insulated gate bipolar transistors; Thermal stability;
Journal_Title :
Electron Devices, IEEE Transactions on
