32/spl times/32 ultraviolet Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array

Author

Yang, B. ; Heng, K. ; Li, T. ; Collins, C.J. ; Wang, S. ; Dupuis, R.D. ; Campbell, J.C. ; Schurman, M.J. ; Ferguson, I.T.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

36

Issue

11

fYear

2000

Firstpage

1229

Lastpage

1231

Abstract

We report the fabrication and performance of a 32/spl times/32 Al/sub 0.1/Ga/sub 0.9/N-GaN ultraviolet p-i-n photodetector array. The devices exhibit very low dark current, the mean dark current density is /spl sim/4 nA/cm/sup 2/ at 5-V reverse bias, and the dark current distribution is very uniform (/spl sim/98% of the devices exhibit dark current density <90 nA/cm/sup 2/). Owing to the design of the p-Al/sub 0.13/Ga/sub 0.87/N window layer, the external quantum efficiency is as high as 72% at 357 nm. The photocurrent distribution is also presented. The detectivity is estimated to be as high as 8/spl times/10/sup 14/ cm/spl middot/Hz/sup 1/2//spl middot/W/sup -1/.

Keywords

III-V semiconductors; aluminium compounds; current density; dark conductivity; gallium compounds; optical arrays; p-i-n photodiodes; photodetectors; ultraviolet detectors; 357 nm; 5 V; 72 percent; Al/sub 0.1/Ga/sub 0.9/N-GaN; Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array; dark current density; dark current distribution; detectivity; external quantum efficiency; low dark current; mean dark current density; p-Al/sub 0.13/Ga/sub 0.87/N window layer; photocurrent distribution; reverse bias; ultraviolet p-i-n photodetector array; Avalanche photodiodes; Contracts; Dark current; Gallium nitride; Gold; Missiles; PIN photodiodes; Photodetectors; Rapid thermal annealing; Solid state circuits;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.890260

Filename

890260