Title :
Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs
Author :
Choi, Sung-Hwan ; Jang, Jun-Hyuk ; Kim, Jang-Joo ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
fDate :
3/1/2012 12:00:00 AM
Abstract :
We proposed and fabricated amorphous indium- gallium-zinc-oxide thin-film transistors (TFTs) employing a novel organic-passivation layer (CYTOP) that results in low damage and good dielectric quality. The TFT with the CYTOP- passivation layer successfully exhibited a relatively good electrical characteristic (μsat = 12.3 cm2/V · s) compared with that (μsat = 5.8 cm2/V · s) of the TFT with a SiOx-passivation layer. The CYTOP-passivated device exhibited relatively good stability (ΔVTH : 2.8 V) under positive bias-temperature stress while the TFTs with the SiOx-passivation layer showed a 3.3-V ΔVTH shift, respectively. The CYTOP passivation was performed at low annealing temperature (180οC), and therefore, it is a good candidate for advanced flexible displays.
Keywords :
II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; passivation; semiconductor device reliability; thin film transistors; wide band gap semiconductors; zinc compounds; CYTOP passivation; CYTOP-passivated device; InGaZnO; TFT reliability; advanced flexible displays; amorphous indium- gallium-zinc-oxide thin-film transistors; dielectric quality; electric characteristics; low annealing temperature; low-temperature organic passivation; positive bias-temperature stress; temperature 180 degC; voltage 2.8 V; voltage 3.3 V; Electric variables; Logic gates; Passivation; Reliability; Stress; Thin film transistors; CYTOP; indium–gallium–zinc-oxide (IGZO) thin-film transistors (TFTs); passivation; reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2178112
