• DocumentCode
    1417210
  • Title

    Leakage Power Contributor Modeling

  • Author

    Dhanwada, Nagu ; Hathaway, David ; Frenkil, J. ; Davis, William Rhett ; Demircioglu, H.

  • Author_Institution
    Syst. & Technol. Group, IBM Corp., Essex Junction, VT, USA
  • Volume
    29
  • Issue
    2
  • fYear
    2012
  • fDate
    4/1/2012 12:00:00 AM
  • Firstpage
    71
  • Lastpage
    78
  • Abstract
    Low-power or power-aware design is one of the greatest challenges facing the semiconductor industry. The fidelity of low power design is dependent on the accuracy of power modeling across a wide range of PVT values. This paper describes an alternative “power contributor”based approach to cell leakage characterization that exploits inherent separability of power consumption for different portions of a cell. An experimental use of this approach is also presented that demonstrates how the effort to characterize leakage power can be greatly reduced with only a marginal impact on accuracy.
  • Keywords
    integrated circuit design; logic circuits; logic design; low-power electronics; microprocessor chips; PVT value; cell leakage characterization; leakage power contributor modeling; low-power design; power consumption separability; power-aware design; semiconductor industry; Analytical models; Integrated circuit modeling; Leakage current; Logic gates; Mathematical model; Power demand; Semiconductor device modeling; leakage; library characterization; low power design; power; power abstraction; power characterization; power modeling;
  • fLanguage
    English
  • Journal_Title
    Design & Test of Computers, IEEE
  • Publisher
    ieee
  • ISSN
    0740-7475
  • Type

    jour

  • DOI
    10.1109/MDT.2012.2183573
  • Filename
    6125991