Title :
A Subthreshold Swing Model for Thin-Film Fully Depleted SOI Four-Gate Transistors
Author :
Sayed, Shehrin ; Hossain, Md Iftekhar ; Khan, M. Ziaur Rahman
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fDate :
3/1/2012 12:00:00 AM
Abstract :
A mathematical model is developed to determine the subthreshold swing of thin-film fully depleted silicon-on-insulator four-gate transistors (G4-FETs). The model is developed using a 2-D model of potential distribution that was derived from 2-D Poisson´s equation. Study reveals that the subthreshold swing is a strong function of back-surface charge condition and depends on structural parameters of the device. Excellent agreement with 3-D device simulations is observed.
Keywords :
Poisson equation; semiconductor device models; silicon-on-insulator; thin film transistors; 2D Poisson\´s equation; 2D model; 3D device simulations; Si; back-surface charge condition; mathematical model; silicon-on-insulator; structural parameters; subthreshold swing model; thin-film fully depleted SOI four-gate transistors; Capacitance; Couplings; Electric potential; Junctions; Logic gates; Silicon; Transistors; 2-D potential distribution; $hbox{G}^{4}$ -FET; Body factor; subthreshold swing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2180023
