• DocumentCode
    1417774
  • Title

    Low-Frequency Noise in Oxide-Based (\\hbox {TiN}/ \\hbox {HfO}_{x}/\\hbox {Pt}) Resistive Random Access Memory Cells

  • Author

    Fang, Z. ; Yu, H.Y. ; Chroboczek, J.A. ; Ghibaudo, G. ; Buckley, J. ; DeSalvo, B. ; Li, X. ; Kwong, D.L.

  • Author_Institution
    Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
  • Volume
    59
  • Issue
    3
  • fYear
    2012
  • fDate
    3/1/2012 12:00:00 AM
  • Firstpage
    850
  • Lastpage
    853
  • Abstract
    In this brief, low-frequency noise (LFN) characteristics are studied in oxide-based (TiN/HfOx/Pt) resistive random access nemory cells having different dimensions. It is confirmed that, for the low resistance state (LRS), current conduction is localized without an area dependence, whereas for the high resistance state, it is a uniform leakage current throughout the whole device area. An LFN model is proposed for the filamentary LRS based on the carrier number fluctuation approach, allowing physical analysis of filament characteristics and the surrounding trap concentration.
  • Keywords
    CMOS memory circuits; carrier density; electron traps; hafnium compounds; hole traps; integrated circuit noise; leakage currents; platinum compounds; random-access storage; titanium compounds; TiN-HfOx-Pt; carrier number fluctuation; current conduction; leakage current; low frequency noise; low resistance state; oxide based resistive random access memory cells; trap concentration; Current measurement; Hafnium compounds; Low-frequency noise; Resistance; Switches; Tin; Current conduction; filament noise model; low-frequency noise (LFN); resistive random access memory (RRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2178245
  • Filename
    6126075
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1417774