DocumentCode :
1417794
Title :
MOSFET modeling for circuit simulation
Author :
Foty, Daniel
Author_Institution :
Gilgamesh Associates, USA
Volume :
14
Issue :
4
fYear :
1998
fDate :
7/1/1998 12:00:00 AM
Firstpage :
26
Lastpage :
31
Abstract :
An overview of MOSFET modeling for circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models commonly used in SPICE-like circuit simulators is presented, followed by a discussion of the evolution of strategies for modeling the geometry dependence of MOSFET characteristics. The growth of complexity and requirements for future MOS models are also considered
Keywords :
MOS integrated circuits; MOSFET; SPICE; circuit analysis computing; digital simulation; semiconductor device models; MOSFET modeling; SPICE-like circuit simulators; circuit simulation; geometry dependence; low-power applications; Circuit simulation; FETs; Geometry; MOSFET circuits; Power generation; Power supplies; Silicon; Solid modeling; Switches; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/101.708477
Filename :
708477
Link To Document :
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