1-D model of current distribution and resistance changes for electromigration in layered lines

Author

Grosjean, David E. ; Okabayashi, Hidekazu

Author_Institution

Microelectron. Res. Labs., NEC Corp., Ibaraki, Japan

Volume

44

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

744

Lastpage

750

Abstract

We present a one-dimensional (1-D) analytical model incorporating contact resistance to calculate the current distribution between an Al line and refractory metal underlayer in a drift velocity measurement structure for electromigration. The current profile so calculated is more accurate than the usual assumption that the current all flows in the Al portion, and it should give a more accurate and reliable relation between drift velocity and current density. It should also be useful in correlating local current density with voiding. Various experimentally observed voiding processes are included in the model; they reproduce and predict different types of changes in total line resistance, most notably the step structure observed in electromigration

Keywords

aluminium; contact resistance; current distribution; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; voids (solid); 1-D model; Al line; Al-TiN; contact resistance; current density; current distribution; current profile; drift velocity measurement structure; electromigration; layered lines; local current density; one-dimensional analytical model; refractory metal underlayer; resistance changes; step structure; total line resistance; voiding; Analytical models; Contact resistance; Current density; Current distribution; Current measurement; Electrical resistance measurement; Electromigration; Electron mobility; Predictive models; Velocity measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.568035

Filename

568035