A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices

Author

Li, Hsin-Hsien ; Chu, Yu-lin ; Wu, Ching-Yuan

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

44

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

782

Lastpage

791

Abstract

A novel charge-pumping method using dc source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities. The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions. The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime

Keywords

MOSFET; charge measurement; hot carriers; interface states; semiconductor device models; semiconductor device reliability; surface potential; MOSFET devices; Si-SiO₂; charge-pumping method; dc source/drain biases; device lifetime; hot carrier reliability; hot-carrier stress; interface-trap lateral distributions; iteration process; oxide-trapped charge densities lateral distributions; specified gate waveforms; surface potential redistribution; Charge carrier processes; Charge pumps; Current measurement; Degradation; Density measurement; Electron traps; Hot carriers; MOSFET circuits; Pulse measurements; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.568040

Filename

568040