Modeling the turn-off of IGBT´s in hard- and soft-switching applications

Author

Trivedi, Malay ; Shenai, Krishna

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

44

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

887

Lastpage

893

Abstract

The turn-off of IGBTs in hard- and soft-switching converters is analyzed using nonquasi-static analysis. It is shown that while the turn-off current waveform for hard-switching is governed solely by the device for a particular value of on-state current and bus voltage, turn-off current waveform for soft-switching is strongly dependent on device-circuit interactions, so that a trade-off between turn-off loss and switching time can be made using external circuit elements. Models are developed to explain IGBT turn-off for both hard- and soft-switching conditions. Hard-switching considers both inductive and resistive loads. Calculated results are validated by comparison with results of measurements and two-dimensional (2-D) numerical simulations

Keywords

insulated gate bipolar transistors; losses; power semiconductor switches; semiconductor device models; 2D numerical simulations; IGBT turn-off; bus voltage; current waveform; device-circuit interactions; hard-switching applications; inductive loads; nonquasistatic analysis; on-state current; resistive loads; soft-switching applications; switching time; Analytical models; Bipolar transistors; Insulated gate bipolar transistors; MOSFET circuits; Numerical simulation; Pulse width modulation inverters; Stress; Switching circuits; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.568054

Filename

568054