W-band oscillator using ion-implanted InGaAs MESFETs

Author

Schellenberg, J.M. ; Lau, C.L. ; Feng, M. ; Brusenback, P.

Author_Institution

Schellenberg Assoc., Huntington Beach, CA, USA

Volume

1

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

100

Lastpage

102

Abstract

A fundamental FET oscillator that operates at 92.3 GHz with an output power of 14 mW and with V/sub DS/=3.9 volts is reported. The efficiency is 11% at this point. The data are referenced to the waveguide output port with no corrections for the transition or fixture loss. By tuning the input waveguide short, the device oscillation frequency could be tuned from approximately 91-93 GHz. Maximum power was attained at 92.3 GHz. The output spectrum of this oscillator shows the sideband noise to be approximately -70 dBc/Hz for all offset frequency of 15 kHz. This is comparable to commercial W-band Gunn oscillators.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ion implantation; microwave integrated circuits; microwave oscillators; tuning; variable-frequency oscillators; 11 percent; 14 mW; 91 to 93 GHz; EHF; InGaAs; MESFET; MIC; MM-wave type; VFO; W-band oscillator; fundamental FET oscillator; input waveguide short; ion-implanted; tuning; Circuits; Cutoff frequency; Gunn devices; Indium gallium arsenide; MESFETs; Microstrip; Microwave FETs; Microwave oscillators; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.89076

Filename

89076