Title :
On particle-mesh coupling in Monte Carlo semiconductor device simulation
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
10/1/1996 12:00:00 AM
Abstract :
Improved nearest-grid-point and cloud-in-cell particle-mesh schemes are suggested, and a new nearest-element-center scheme proposed, to help reduce self force and improve the spatial accuracy of forces in Monte Carlo semiconductor device simulation. These schemes are exercised on both one-and two-dimensional model problems. An attempt to design a scheme with reduced self force for unstructured triangular meshes is unsuccessful
Keywords :
Monte Carlo methods; semiconductor device models; Monte Carlo simulation; cloud-in-cell particle-mesh; nearest-element-center; nearest-grid-point particle-mesh; one-dimensional model; particle-mesh coupling; self force; semiconductor device; triangular mesh; two-dimensional model; Acceleration; Computational modeling; Doping; MOSFET circuits; Monte Carlo methods; National electric code; Particle tracking; Poisson equations; Semiconductor devices; Smoothing methods;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
