DocumentCode
1418020
Title
A super low-noise 0.1 μm T-gate InAlAs-InGaAs-InP HEMT
Author
Duh, K.H.G. ; Chao, P.C. ; Liu, S.M.J. ; Ho, P. ; Kao, M.Y. ; Ballingall, J.M.
Author_Institution
Gen. Electr. Co., Syracuse, NY, USA
Volume
1
Issue
5
fYear
1991
fDate
5/1/1991 12:00:00 AM
Firstpage
114
Lastpage
116
Abstract
It is reported that 0.1-μm T-gate InAlAs-InGaAs-InP HEMTs have exhibited state-of-the-art noise and gain performance well up to 100 GHz. Minimum noise figures of 0.8 and 1.2 dB with gains of 8.9 and 7.2 dB have been measured at 60 and 94 GHz, respectively. A high-performance W -band three-stage amplifier has been built using these devices with noise figures between 3.2-3.5 dB and a gain of 17.5±0.4 dB from 91 to 96 GHz. A 6-dB improvement in the 1-dB compression characteristic of the amplifier had been achieved with a GaAs pseudomorphic HEMT in the third stage
Keywords
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 0.8 to 1.2 dB; 100 GHz; 7.2 to 8.9 dB; HEMT; InAlAs-InGaAs-InP; MM-wave device; T-gate; W-band; submicron gate; super low-noise; three-stage amplifier; HEMTs; Impedance; Low-noise amplifiers; Noise figure; Noise measurement; Power measurement; Probes; Switches; Temperature; Testing;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.89081
Filename
89081
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