• DocumentCode
    1418099
  • Title

    Ultralow Switching Energy Ni/ \\hbox {GeO}_{x} /HfON/TaN RRAM

  • Author

    Cheng, C.H. ; Chin, Albert ; Yeh, F.S.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Tsing-Hua Univ., Hsinchu, Taiwan
  • Volume
    32
  • Issue
    3
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    366
  • Lastpage
    368
  • Abstract
    Using stacked covalent-bond-dielectric GeOx, on metal-oxynitride HfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 106 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.
  • Keywords
    germanium compounds; hafnium compounds; nickel; random-access storage; tantalum compounds; Ni-GeOx-HfON-TaN; Ni/GeOx/HfON/TaN resistive random access memory; cycling endurance; energy 8 fJ; excellent performance; hopping conduction; metal-oxide RRAM; metal-oxynitride HfON; negative temperature coefficient; positive TC; power 0.3 muW; power 0.6 nW; stacked covalent-bond-dielectric GeOx; ultralow switching energy; $hbox{GeO}_{2}$; HfON; hopping conduction; resistive random access memory (RRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2095820
  • Filename
    5680574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1418099