High-Performance 1- $\mu\hbox {m}$ GaN n-MOSFET With MgO/MgO– $\hbox {TiO}_{2}$ Stacked Gat

Gate length of 1-μm enhancement-mode n-channel GaN MOSFET with MgO and hybrid MgO-TiO₂ stacked gate dielectrics were characterized. The leakage current of a stacked MgO and hybrid MgO-TiO₂ MOS capacitor can be as low as 6.2 × 10^-9 and 6.9 × 10^-9 A/cm² at ±1-V bias, respectively. Through a self-aligned process, superior I_D-V_D and I_D-V_G electrical characteristics of a MOSFET were obtained. The maximum drain current is 3.69 × 10^-5 A/μm at a gate voltage V_g of 8 V and a drain voltage V_D of 10 V. The subthreshold swing is 342 mV/dec, and the I_ON/I_OFF is 5.7 × 10⁴.