Title :
An improved small-signal equivalent circuit model for III-V nitride MODFET´s with large contact resistances
Author :
Burm, Jinwook ; Schaff, William J. ; Eastman, Lester F. ; Amano, Hiroshi ; Akasaki, Isamu
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
A small-signal equivalent circuit model of III-V nitride MODFET´s is presented. The metal-semiconductor ohmic contacts were modeled as a transmission line, as parasitic Z-elements cannot be modeled as a simple resistor/inductor discrete circuit due to high contact resistances. The model describes the highly resistive contacts with a good accuracy
Keywords :
III-V semiconductors; contact resistance; equivalent circuits; high electron mobility transistors; ohmic contacts; semiconductor device models; III-V nitride; MODFET; contact resistances; metal-semiconductor ohmic contacts; resistive contacts; small-signal equivalent circuit model; transmission line model; Cutoff frequency; Equivalent circuits; FETs; Gallium nitride; HEMTs; III-V semiconductor materials; MODFET circuits; Ohmic contacts; Parasitic capacitance; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
