Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power

Author

Walpole, J.N. ; Donnelly, J.P. ; Groves, S.H. ; Missaggia, L.J. ; Woodhouse, J.D. ; Bailey, R.J. ; Napoleone, Antonio

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

8

Issue

11

fYear

1996

Firstpage

1429

Lastpage

1431

Abstract

Diode lasers have been fabricated in InGaAsP-InP multiple-quantum-well material grown by atmospheric-pressure organometallic vapor-phase epitaxy with an active optical cavity consisting of a ridge-waveguide region coupled to a tapered gain region. Over 1 W of CW output power was obtained with 85% of the power in the central lobe of a diffraction-limited far-field radiation pattern.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser transitions; light diffraction; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; /spl mu/m-wavelength tapered-gain-region lasers; 1 W; 1.3 mum; 85 percent; CW output power; InGaAsP-InP; InGaAsP-InP multiple-quantum-well material; active optical cavity; atmospheric-pressure organometallic vapor-phase epitaxy; central lobe; diffraction-limited; diffraction-limited far-field radiation pattern; diode laser fabrication; ridge-waveguide region; tapered gain region; Epitaxial growth; Optical amplifiers; Optical coupling; Optical design; Optical diffraction; Optical waveguides; Oscillators; Power amplifiers; Power generation; Power lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.541539

Filename

541539