Title :
Modeling and Performance Investigation of the Double-Gate Carbon Nanotube Transistor
Author :
Yang, Xuebei ; Mohanram, Kartik
Author_Institution :
Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
In this letter, we propose a semiclassical model for the performance investigation and optimization of the double-gate carbon nanotube field-effect transistor (DG-CNTFET). The DG-CNTFET is effective in controlling the ambipolar conduction that is inherent to Schottky barrier (SB) CNTFETs using two independent gates, namely, the primary gate and the polarity gate. Whereas the primary gate serves to turn the device on and off, the polarity gate can be used to configure the device in either the p-type or the n-type mode of operation. The DG-CNTFET exhibits unipolar conduction and can achieve a large ratio of over six orders of magnitude. Since the proposed model is physics based and does not rely on fitting parameters, it can be used to study the effect of parameters such as CNT chirality, SB height, and gate dielectric thickness on the DG-CNTFET performance.
Keywords :
Schottky gate field effect transistors; carbon nanotubes; field effect transistors; optimisation; C; CNT chirality; Schottky barrier CNTFET; ambipolar conduction; double-gate carbon nanotube field-effect transistor; gate dielectric thickness; optimization; polarity gate; unipolar conduction; Carbon nanotube; carbon nanotube field-effect transistors (CNTFETs); device modeling; double-gate field-effect transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2095826
