DocumentCode :
1418163
Title :
N-Channel Germanium MOSFET Fabricated Below 360 
by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs
Author :
Park, Jin-Hong ; Kuzum, Duygu ; Jung, Woo-Shik ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
234
Lastpage :
236
Abstract :
Below 360°C, we demonstrate germanium (Ge) n+/p junction diode and n-channel Ge metal-oxide-semiconductor field-effect transistor (MOSFET) with a low temperature Al/Al2O3/GeO2 gate stack for monolithic 3-D integration using a metal-induced dopant activation (MIDA) technique. In particular, the cobalt (Co) MIDA phenomenon is investigated on Ge damaged by an implantation process. Shallow (~100 nm) source/drain junctions with very low resistivity (5.2 × 10-4 Ω-cm) are then achieved at very low temperature by the Co MIDA technique. Consequently, high diode and transistor current on/off ratios (~104 and ~103, respectively) are obtained in this n-channel Ge MOSFET.
Keywords :
MOSFET; alumina; aluminium; cobalt; elemental semiconductors; germanium; germanium compounds; semiconductor diodes; three-dimensional integrated circuits; Al-Al2O3-GeO2; Co; MIDA technique; cobalt-induced dopant activation technique; gate stack; implantation process; metal-oxide-semiconductor field-effect transistor; monolithic 3D integration; monolithic three-dimensional-IC; n-channel germanium MOSFET; n-p junction diode; source-drain junctions; transistor current; 3-D integrated circuits; Germanium; metal–oxide–semiconductor field-effect transistor (MOSFET); metal-induced crystallization (MIC); metal-induced dopant activation (MIDA);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2095827
Filename :
5680583
Link To Document :
