Photosensitivity of Field-Effect Transistors Based on ZnO Nanowire Networks

Self-assembling ordered ZnO nanowire (NW) network-based field-effect transistors (FETs) were fabricated by bottom-up photolithography. The devices had on/off ratios of >; 10⁴, mobilities of ~1.31 cm² V^-1 s^-1, mobilities of and threshold voltages of ~-1 V. Under UV treatment (340 nm, 57.46 ), the devices exhibited relative photoconductivity ratio increases of at a depletion state of 8 V gate bias (1.56 × 103 A/V). The fabricated FETs exhibit a broad range of electrical characteristics because of variation in the contact quality of the metal/NW, the dielectric/NW, and the NW/NW interfaces. However, the fabricated approach offers a cost-effective route to integrate self-assembled ZnO NW network-based FETs.