The Effect of Dynamic Bias Stress on the Photon-Enhanced Threshold Voltage Instability of Amorphous HfInZnO Thin-Film Transistors

Author

Son, Kyoung-Seok ; Kim, Hyun-Suk ; Maeng, Wan-Joo ; Jung, Ji-Sim ; Lee, Kwang-Hee ; Kim, Tae-Sang ; Park, Joon Seok ; Kwon, Jang-Yeon ; Koo, Bonwon ; Lee, Sang-Yoon

Author_Institution

Display Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea

Volume

32

Issue

2

fYear

2011

Firstpage

164

Lastpage

166

Abstract

The electrical stability of amorphous HfInZnO (HIZO) thin-film transistors (TFTs) was investigated under static and dynamic stress conditions, with simultaneous visible light radiation. The extent of device degradation is found to be strongly sensitive to the gate voltage, pulse duty ratio, pulse frequency, and exposure to visible light. Dynamic stress experiments demonstrate that highly stable devices can be realized by adjusting the pulse duty ratio and frequency, which suggests that amorphous HIZO TFTs are a promising candidate of switching devices for large-area high-resolution AMLCD applications.

Keywords

amorphous semiconductors; hafnium compounds; plasma CVD; stress effects; thin film transistors; HfInZnO; amorphous thin-film transistors; dynamic bias stress; electrical stability; gate voltage; large-area high-resolution AMLCD applications; photon-enhanced threshold voltage instability; pulse duty ratio; pulse frequency; visible light radiation; Dynamic stress; HfInZnO; instability; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2093867

Filename

5680586