Title :
1310-nm DBR-type MQW gain-clamped semiconductor optical amplifiers with AM-CATV-grade linearity
Author :
Tiemeijer, L.F. ; van den Hoven, G.N. ; Thijs, P.J.A. ; Van Dongen, T. ; Binsma, J.J.M. ; Jansen, E.J.
Author_Institution :
Philips Optoelectron. Centre, Eindhoven, Netherlands
Abstract :
A 1310-nm gain clamped semiconductor optical amplifier with amplitude modulation CATV-grade linearity at an output power of 8 mW is demonstrated for the first time. The InGaAsP multiquantum-well laser amplifier is equipped with distributed Bragg reflectors at each end to supply the feedback necessary for gain clamping. The TE optical gain of 21.3 dB is measured to be constant within 0.1 dB up to 25-mW signal output power. Electrical signal distortion experiments are presented to demonstrate the linearity of the device.
Keywords :
III-V semiconductors; amplitude modulation; cable television; distributed Bragg reflector lasers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser feedback; laser transitions; optical transmitters; quantum well lasers; 1.3 dB; 1310 nm; 25 mW; 8 mW; AM-CATV-grade linearity; InGaAsP multiquantum-well laser amplifier; TE optical gain; amplitude modulation CATV-grade linearity; distributed Bragg reflectors; electrical signal distortion experiments; gain clamped semiconductor optical amplifier; gain clamping; mW signal output power; nm DBR-type MQW gain-clamped semiconductor optical amplifiers; output power; Amplitude modulation; Distributed feedback devices; Laser feedback; Linearity; Optical distortion; Optical feedback; Power amplifiers; Power generation; Quantum well devices; Semiconductor optical amplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
