Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells

Author

Lin, Ching-Fuh ; Lee, Bor-Lin ; Lin, Po-Chien

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

8

Issue

11

fYear

1996

Firstpage

1456

Lastpage

1458

Abstract

Broad-band AlGaAs-GaAs superluminescent diodes are fabricated using asymmetric dual quantum wells. With a proper design of the quantum-well structure, the spectral width of the superluminescent diodes could be engineered. By choosing 40 /spl Aring/ and 75 /spl Aring/, respectively, for the two quantum wells, the spectrum remains bell-shaped and is broadened to 2/spl sim/3 times that of the conventional superluminescent diodes. The measured spectra show that there is no obvious preference on the transition in either well at any pumping current.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical fabrication; optical pumping; semiconductor growth; semiconductor quantum wells; substrates; superluminescent diodes; symmetry; vapour phase epitaxial growth; 40 A; 75 A; AlGaAs-GaAs; AlGaAs-GaAs superluminescent diodes; asymmetric dual quantum wells; bell-shaped; broad-band superluminescent diode fabrication; measured spectra; pumping current; quantum-well structure; spectral width; substrate; MOCVD; Optical modulation; Optical pumping; Optical sensors; Quantum mechanics; Quantum wells; Semiconductor optical amplifiers; Stimulated emission; Substrates; Superluminescent diodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.541548

Filename

541548