Title :
Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition
Author :
Lee, Hsing-Chung ; Kost, A. ; Kawase, M. ; Hariz, A. ; Dapkus, P.Daniel ; Garmire, Elsa M.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/cm/sup 2/, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width.<>
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; chemical vapour deposition; gallium arsenide; optical saturable absorption; semiconductor superlattices; 50 to 350 ns; AlGaAs-GaAs; III-V semiconductors; excitonic resonances; metalorganic chemical vapor deposition; minimum measured saturation intensity; minority carrier lifetimes; multiple quantum wells; nonlinear absorption properties; well width; Absorption; Charge carrier lifetime; Chemical vapor deposition; Gallium arsenide; Optical materials; Optical switches; Potential well; Quantum well devices; Resonance; Temperature dependence;
Journal_Title :
Quantum Electronics, IEEE Journal of
