Title :
Selective epitaxy base transistor (SEBT)
Author :
Burghartz, J.N. ; Ginsberg, B.J. ; Mader, S.R. ; Chen, Tze-Chiang ; Harame, David L.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
A bipolar transistor using selective epitaxy for base formation in a double-poly self-aligned structure is presented. The intrinsic base was formed by a selective-epitaxial deposition in place of ion implantation. Such epitaxial base processes are capable of achieving a narrow intrinsic base sheet resistance R/sub bi/ and base-emitter diffusion capacitance c/sub be/ compared to advanced ion-implanted processes. A selective epitaxial base can be simply introduced in advanced double-poly self-aligned processes compared to a nonselective epitaxial layer.<>
Keywords :
bipolar transistors; semiconductor growth; vapour phase epitaxial growth; VPE; base formation; base-emitter diffusion capacitance; bipolar transistor; double poly selfaligned structure; narrow intrinsic base sheet resistance; selective epitaxy; Bipolar transistors; CMOS technology; Doping; Epitaxial growth; Epitaxial layers; Ion implantation; Isolation technology; Space technology; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
