Title :
Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers
Author :
Kolbas, Robert M. ; Anderson, Neal G. ; Laidig, W.D. ; Sin, Yongkun ; Lo, Y.C. ; Hsieh, K.Y. ; Yang, Y.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina Univ., Raleigh, NC, USA
Abstract :
The materials growth, materials characterization, device fabrication, device results, and modeling of strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection quantum-well lasers are presented. Experimental and theoretical methods for determining the electronic energy states in pseudomorphic quantum wells are presented and discussed, and design curves for the emission energy of biaxially compressed InGaAs and GaAs are presented as a function of indium composition and quantum well width. Photopumped lasers with thresholds comparable to early lattice-matched AlGaAs-GaAs quantum-well lasers, as well as continuous-wave room temperature strained-layer injection lasers, are demonstrated. The temperature dependence of the current injection devices is good (T/sub 0/=147 K) in marked contrast to photopumped samples. Preliminary life test results indicate that long-lived strained-layer injection lasers may be possible.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical pumping; semiconductor growth; semiconductor junction lasers; 19 to 25 degC; CW lasers; III-V semiconductors; InGaAs-GaAs-AlGaAs; biaxial compression; current injection quantum-well lasers; device fabrication; electronic energy states; emission energy; materials characterization; materials growth; pseudomorphic quantum wells; room temperature; strained-layer photopumped lasers; temperature dependence; Energy states; Gallium arsenide; Indium gallium arsenide; Laser theory; Life testing; Optical device fabrication; Optical materials; Quantum mechanics; Quantum well lasers; Temperature dependence;
Journal_Title :
Quantum Electronics, IEEE Journal of
