Comments on "On the base profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues"

Author

Song, J. ; Yuan, J.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

Volume

44

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

915

Lastpage

917

Abstract

For the original paper see ibid., vol. 40, p. 542-555 (1993). The base transit time of the trapezoidal Ge base profile for the SiGe bipolar transistor has been evaluated. The analytical equations derived in the aforementioned paper result in significant error as the trapezoid profile is close to uniform Ge profile. In this work accurate analytical equations are derived. Comparisons between the present analytical predictions and previous published results are given.

Keywords

Ge-Si alloys; bipolar transistors; carrier density; cryogenic electronics; doping profiles; semiconductor epitaxial layers; semiconductor materials; 77 K; SiGe; base profile design; base profile optimization; base transit time; circuit performance; epitaxial SiGe-base bipolar technology; trapezoidal Ge base profile; Bipolar transistors; Circuit optimization; Delay; Design optimization; Equations; Germanium silicon alloys; Nitrogen; Photonic band gap; Silicon germanium; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.568062

Filename

568062