Reliability modeling of HK MG technologies

Author

Nigam, Tanya ; Kerber, Andreas

Author_Institution

GLOBALFOUNDRIES, Santa Clara, CA, USA

fYear

2014

fDate

15-17 Sept. 2014

Firstpage

1

Lastpage

8

Abstract

It has been demonstrated that the introduction of HfO₂ gate stacks into CMOS technologies provides the means to continue with traditional device gate length scaling. However, the introduction of HfO₂ as a new gate dielectric into the gate stack of FETs brings about new challenges for understanding reliability physics and qualification. This review summarizes recent advances in the modeling of charge trapping and defect generation in HfO₂ gate stacks. This paper relates the electrical properties to the chemical/physical properties of the high-κ dielectric and discusses implication for technology scaling.

Keywords

CMOS integrated circuits; field effect transistors; hafnium compounds; high-k dielectric thin films; semiconductor device models; semiconductor device reliability; CMOS technologies; FET; HK MG technologies; HfO₂; charge trapping; chemical properties; defect generation; electrical properties; gate dielectric; gate length scaling; gate stacks; high-κ dielectric; physical properties; reliability modeling; technology scaling; Charge carrier processes; Dielectrics; Hafnium compounds; Leakage currents; Logic gates; Stress; HK MG; HfO2; NBTI; PBTI; SILC; TDDB;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2014 IEEE Proceedings of the

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2014.6946002

Filename

6946002