Title :
Monte Carlo modeling of femtosecond relaxation processes in AlGaAs/GaAs quantum wells
Author :
Stanton, Christopher J. ; Bailey, Daniel W. ; Hess, Karl
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
Results are presented from Monte Carlo simulations of the femtosecond relaxation of photoexcited electrons in AlGaAs/GaAs quantum wells. Two experiments are simulated: in one electrons are initially excited at high energies far from equilibrium, and in other electrons are excited at low energies close to the bottom of the band. The effects of electron-electron, polar optical phonon, and intervalley deformation potential scattering are studied. For comparison, subpicosecond relaxation in bulk GaAs is also discussed.<>
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; photoconductivity; semiconductor junctions; AlGaAs-GaAs quantum wells; III-V semiconductors; Monte Carlo simulations; electron-electron scattering; femtosecond relaxation processes; intervalley deformation potential scattering; photoexcited electrons; polar optical phonon scattering; Circuits; Electrons; Gallium arsenide; High speed optical techniques; Monte Carlo methods; Optical scattering; Particle scattering; Spectroscopy; Ultrafast electronics; Ultrafast optics;
Journal_Title :
Quantum Electronics, IEEE Journal of
