Title :
150 GHz Complementary Anti-Parallel Diode Frequency Tripler in 130 nm CMOS
Author :
Shim, Dongha ; Mao, Chuying ; Sankaran, Swaminathan ; Kenneth, K.O.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
The first complementary anti-parallel Schottky diode frequency tripler in CMOS is demonstrated. The tripler exhibits ~34-dB minimum conversion loss, -24-dBm maximum output power at 150 GHz, and 3 db output frequency range of ~10 GHz.
Keywords :
CMOS integrated circuits; Schottky diodes; frequency multipliers; CMOS; anti-parallel Schottky diode frequency tripler; complementary anti-parallel diode frequency tripler; conversion loss; frequency 150 GHz; output frequency range; output power; size 130 nm; CMOS integrated circuits; Frequency measurement; Harmonic analysis; Loss measurement; Power generation; Schottky diodes; Transmission line measurements; CMOS; Schottky barrier diode; complementary anti-parallel diode pair; frequency tripler; sub-terahertz;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2087321
