• DocumentCode
    1418988
  • Title

    Two ±0.7 V S2I class AB differential memory cells

  • Author

    Grech, I. ; Micallef, J. ; Vladimirova, T.

  • Author_Institution
    Dept. of Microelectron., Malta Univ., Malta
  • Volume
    36
  • Issue
    25
  • fYear
    2000
  • fDate
    12/7/2000 12:00:00 AM
  • Firstpage
    2062
  • Lastpage
    2063
  • Abstract
    Two novel class AB sampled switched current memory cells are presented, together with simulation results obtained at a supply voltage of ±0.7 V. These cells exhibit a quiescent current that can be accurately controlled and is independent of the supply voltage. Furthermore, it is ensured that the minimum current passing through the memory transistors is equal to a well defined value, throughout the signal range. The first memory cell is based on a fully-differential architecture, while the second one can be used in single-ended or pseudo-differential circuits
  • Keywords
    CMOS analogue integrated circuits; analogue processing circuits; analogue storage; circuit feedback; switched current circuits; -0.7 V; 0.7 V; S2I memory cells; class AB differential memory cells; fully-differential architecture; memory transistors; pseudo-differential circuits; quiescent current control; sampled SI memory cell; sampled switched current memory cells; single-ended circuits;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001480
  • Filename
    891818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1418988